N-type semiconductor

N-type semiconductor can be made by adding a small amount of impurity atoms pentavalen (antimony, phosphorus or arsenic) in pure silicon. Impurity atoms (dopan) has five valence electrons effectively has a charge of +5 q. When an atom position pentavalen silicon atoms in the crystal lattice, only four valence electrons that can form a complete covalent bond, and remains an unpaired electron. Given the small thermal energy alone, the remaining electrons will become free electrons and ready to charge carriers in the process of electricity transmission. Material resulting from this contamination process is called the n-type semiconductor because it produces a negative charge carriers from the neutral crystal. Because the impurity atoms to electrons, the impurity atoms are called donor atoms.

P-type semiconductor the same way as the n-type semiconductor, p-type semiconductors can be made by adding some impurity atoms kecif trivalent (aluminum, boron, gallium or indium) in pure semiconductors, such as pure silicon. Impurity atoms (dopan) has three valence electrons, so effectively can only form three covalent bonds. When a trivalent atom positions of silicon atoms in the crystal lattice, covalent tigaikatan fully formed, and left a positive charge of silicon atoms that are not paired are called holes (holes). Material resulting from this contamination process is called p-type semiconductor because it produces a negative charge carriers in the neutral crystal. Because the impurity atoms to accept electrons, the impurity atoms are called atomic aseptor (acceptor).